| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to increase a drain junction breakdown voltage by forming a uniform lightly-doped-drain(LDD) region through an ion implantation process for form the LDD region, and to embody a stable device by reducing a gate induced drain leakage(GIDL) current. CONSTITUTION: An interlayer dielectric having a groove for defining a gate electrode is formed on a semiconductor substrate(21). An insulation layer spacer is formed on the sidewall of the groove. A stack structure pattern composed of a gate insulation layer(27) pattern, a polycrystalline silicon layer pattern(29), a tungsten layer pattern(31) and a mask insulation layer pattern(33) is formed inside the groove. An LDD oxide process is performed on the resultant structure. The interlayer dielectric and the insulation layer spacer are eliminated to expose the stack structure pattern having a reverse slope. Low density impurity ions are implanted into the semiconductor substrate at both sides of the stack structure pattern to form a low density LDD region(35) at the edge of the stack structure pattern.
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