发明名称 Thin film formation method
摘要 In a laser ablation method comprising the steps of irradiating a laser beam to target material 107, and depositing ejected species from the target material on a faced substrate 109 to form a thin film, an ambient gas is introduced into reaction chamber 101 under a constant certain pressure when the laser ablation is performed, using a target material with almost or the same composition as that of a thin film to be obtained. It is thereby possible to obtain a thin film with the same composition as that of the target material readily, without requiring an introduction of O2 gas and a substrate heating. As a result, it is not necessary to limit materials for a substrate, and it is possible to adjust the adaptability of an anaerobic process.
申请公布号 US6451391(B1) 申请公布日期 2002.09.17
申请号 US19990392794 申请日期 1999.09.09
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YAMADA YUKA;YOSHIDA TAKEHITO;SUZUKI NOBUYASU;MAKINO TOSHIHARU
分类号 H01L21/316;C23C14/28;H01L21/203;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):C23L14/32;C23C16/40 主分类号 H01L21/316
代理机构 代理人
主权项
地址