发明名称 |
Thin film formation method |
摘要 |
In a laser ablation method comprising the steps of irradiating a laser beam to target material 107, and depositing ejected species from the target material on a faced substrate 109 to form a thin film, an ambient gas is introduced into reaction chamber 101 under a constant certain pressure when the laser ablation is performed, using a target material with almost or the same composition as that of a thin film to be obtained. It is thereby possible to obtain a thin film with the same composition as that of the target material readily, without requiring an introduction of O2 gas and a substrate heating. As a result, it is not necessary to limit materials for a substrate, and it is possible to adjust the adaptability of an anaerobic process.
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申请公布号 |
US6451391(B1) |
申请公布日期 |
2002.09.17 |
申请号 |
US19990392794 |
申请日期 |
1999.09.09 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMADA YUKA;YOSHIDA TAKEHITO;SUZUKI NOBUYASU;MAKINO TOSHIHARU |
分类号 |
H01L21/316;C23C14/28;H01L21/203;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):C23L14/32;C23C16/40 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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