| 发明名称 |
Method of manufacturing a cylindrical storage node in a semiconductor device |
| 摘要 |
A method of manufacturing a cylindrical storage node in a semiconductor device, in which loss differences of the cylindrical storage node between the center and the edge of cell areas, caused by an etch-back process of storage node isolation, is minimized, thereby maintaining uniform electrical capacitances over the entire area of a semiconductor wafer.
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| 申请公布号 |
US6451663(B1) |
申请公布日期 |
2002.09.17 |
| 申请号 |
US20010983348 |
申请日期 |
2001.10.24 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI SUNG-GIL;AHN TAE HYUK;JEONG SANG SUP;CHUNG DAE HYUK;LEE WON JUN |
| 分类号 |
H01L21/302;H01L21/02;H01L21/3065;H01L21/321;H01L21/8242;H01L27/108;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/302 |
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