| 摘要 |
A semiconductor device is provided with at least one transistor formed on a semiconductor substrate, the transistor being provided with a conductive sidewall spacer, and at least one conductive film formed so as to face a gate of the transistor via an insulative film, the conductive film covering at least an entire region of a gate region of the transistor and acting as a capacitor electrode. The conductive sidewall spacer and the conductive film are connected together. A potential is supplied to the conductive sidewall spacer and the conductive film, the potential being different from a potential of the gate of the transistor. |
