发明名称 Stacked integrated circuit and capacitor structure containing via structures
摘要 An integrated circuit structure includes a planar capacitor positioned adjacent to a logic circuit implemented on a silicon die. The silicon die is bonded to a mounting base using controlled collapse chip connection methods such that a ground terminal of the silicon die is coupled to a ground trace in the mounting base and a Vdd terminal of the silicon die is coupled to a Vdd trace in the mounting base. The capacitor includes via structures with controlled collapse chip connection structures for bonding to the mounting base directly above the silicon die and coupling a first charge accumulation plate to the Vdd trace and a second charge accumulation plate to the ground trace.
申请公布号 US6452250(B1) 申请公布日期 2002.09.17
申请号 US20000488289 申请日期 2000.01.20
申请人 ADVANCED MICRO DEVICES, INC. 发明人 BUYNOSKI MATTHEW S.
分类号 H01G2/06;H01L23/498;(IPC1-7):H01L29/00 主分类号 H01G2/06
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