发明名称 |
Group III nitride compound semiconductor light-emitting device having a light emission output of high light intensity |
摘要 |
A cap layer of GaN about 140 Å thick and a p-type clad layer of Mg-doped p-type AlxGa1-xN (x=0.12) about 200 Å thick are formed successively on an MQW active layer about 230 Å thick. A p-type contact layer of Mg-doped p-type AlyGa1-yN (y=0.05) about 600 Å thick is further formed thereon. These composition ratios x and y are selected to satisfy the expression "0.03<=0.3x<=y<=0.5x<=0.08", so that the composition of the p-type contact layer becomes close to the composition of the p-type clad layer.
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申请公布号 |
US6452214(B2) |
申请公布日期 |
2002.09.17 |
申请号 |
US20000523463 |
申请日期 |
2000.03.10 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
KANEYAMA NAOKI;ASAI MAKOTO;SAWAZAKI KATSUHISA |
分类号 |
H01L33/06;H01L33/10;H01L33/32;H01L33/40;H01S5/00;H01S5/042;H01S5/323;H01S5/343;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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