Drop-in test structure and methodology for characterizing an integrated circuit process flow and topography

摘要

A drop-in test structure fabricated upon a production integrated circuit elevational profile and a method for using the drop-in test structure for characterizing an integrated circuit production methodology are described. The test structure may be fabricated upon an integrated circuit elevational profile formed according to a subset of steps within a sequence of steps of the integrated circuit production methodology that culminates in a production integrated circuit intended for use by a consumer. According to an embodiment, the integrated circuit elevational profile may be fabricated according to a majority of the sequence of steps. Alternatively, the integrated circuit elevational profile may be fabricated according to a minority of the sequence of steps. The test structure may be fabricated upon die sites designated to receive the test structure. Alternatively, the test structure may be fabricated upon die sites otherwise intended for operable integrated circuits. In an embodiment, test structures may be fabricated upon only selected die sites. Alternatively, test structures may be fabricated across the entire wafer to characterize spatial variation in process parameters. The test structures may be used to characterize the underlying elevational profile and to identify both systematic and random defects either as part of routine monitoring or in response to the observance of defective chips using other monitoring.