发明名称 DRAM capacitor formulation using a double-sided electrode
摘要 A capacitor having a double sided electrode for enhanced capacitance. In one embodiment, the double sided electrode capacitor is a stacked container capacitor used in a dynamic random access memory circuit. The double sided electrode is preferably formed of a conductive metal, provided that an oxide of the metal is conductive. The double sided electrode capacitor provides a capacitor that has high storage capacitance which provides an increased efficiency for a cell without an increase in the size of the cell.
申请公布号 US6451661(B1) 申请公布日期 2002.09.17
申请号 US19990415213 申请日期 1999.10.12
申请人 MICRON TECHNOLOGY, INC. 发明人 DEBOER SCOTT J.;AL-SHAREEF HUSAM;THAKUR RANDHIR
分类号 H01L21/02;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/20 主分类号 H01L21/02
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