发明名称 |
DRAM capacitor formulation using a double-sided electrode |
摘要 |
A capacitor having a double sided electrode for enhanced capacitance. In one embodiment, the double sided electrode capacitor is a stacked container capacitor used in a dynamic random access memory circuit. The double sided electrode is preferably formed of a conductive metal, provided that an oxide of the metal is conductive. The double sided electrode capacitor provides a capacitor that has high storage capacitance which provides an increased efficiency for a cell without an increase in the size of the cell.
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申请公布号 |
US6451661(B1) |
申请公布日期 |
2002.09.17 |
申请号 |
US19990415213 |
申请日期 |
1999.10.12 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DEBOER SCOTT J.;AL-SHAREEF HUSAM;THAKUR RANDHIR |
分类号 |
H01L21/02;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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