发明名称 Plural interleaved exposure process for increased feature aspect ratio in dense arrays
摘要 A method for exposing a workpiece in a dual exposure step-and-repeat process starts by forming a design for a reticle mask. Deconstruct the design for the reticle mask by removing a set(s) of the features that are juxtaposed. Form unexposed resist on the workpiece. Load the workpiece and the reticle mask into the stepper. Expose the workpiece through the reticle mask. Reposition the workpiece by a nanostep. Then expose the workpiece through the reticle mask after the repositioning. Test whether the plural exposure process is finished. If the result of the test is NO the process loops back to repeat some of the above steps. Otherwise the process has been completed. An overlay mark is produced by plural exposures of a single mark. A dead zone is provided surrounding an array region in which printing occurs subsequent to exposure in an original exposure. Stepper-framing-blades are moved over the dead zone to prevent additional exposures after an initial exposure. Alternatively, the workpiece can be fully exposed first by stepping a series of full steps, then going back to the starting position, making a nanostep to reset the starting position and re-exposing from the reset starting position in the same way with full steps from the nanostepped position.
申请公布号 US6451508(B1) 申请公布日期 2002.09.17
申请号 US20000561472 申请日期 2000.04.28
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;INFINEON TECHNOLOGIES NORTH AMERICA CORP. 发明人 BUKOFSKY SCOTT J.;KUNKEL GERHARD;THOMAS ALAN C.
分类号 G03F7/20;(IPC1-7):G03F7/20 主分类号 G03F7/20
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