发明名称 Semiconductor physical quantity sensor
摘要 A semiconductor physical quantity sensor from which a stable sensor output can be obtained even when the usage environment changes. A silicon thin film is disposed on an insulating film on a supporting substrate, and a bridge structure having a weight part and moving electrodes and cantilever structures having fixed electrodes are formed as separate sections from this silicon thin film. The moving electrodes provided on the weight part and the cantilevered fixed electrodes are disposed facing each other. Slits are formed at root portions of the cantilevered fixed electrodes at the fixed ends thereof, and the width W1 of the root portions is thereby made narrower than the width W2 of the fixed electrodes proper. As a result, the transmission of warp of the supporting substrate to the cantilevered fixed electrodes is suppressed.
申请公布号 US6450031(B1) 申请公布日期 2002.09.17
申请号 US20000625860 申请日期 2000.07.26
申请人 DENSO CORPORATION 发明人 SAKAI MINEKAZU;MURATA MINORU;AOYAMA SEIKI;NAKAGAWA YOUKO
分类号 B81B3/00;G01P15/08;G01P15/125;(IPC1-7):G01P15/00 主分类号 B81B3/00
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