| 发明名称 |
Ultra thin, single phase, diffusion barrier for metal conductors |
| 摘要 |
The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.
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| 申请公布号 |
US6452276(B1) |
申请公布日期 |
2002.09.17 |
| 申请号 |
US19980070394 |
申请日期 |
1998.04.30 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COHEN STEPHAN A.;MCFEELY FENTON R.;NOYAN CEVDET I.;RODBELL KENNETH P.;YURKAS JOHN J.;ROSENBERG ROBERT |
| 分类号 |
H01L23/52;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/52 |
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