发明名称 Method for forming photoresist mask
摘要 Multiple exposure of a photoresist layer having an exposure depth depending upon the amount of exposure energy applied are executed at different respective exposure energy amounts through a plurality of respective photomasks with different respective opening patterns. The photoresist layer is then processed for image reversal.
申请公布号 US6451511(B1) 申请公布日期 2002.09.17
申请号 US19990364035 申请日期 1999.07.30
申请人 TDK CORPORATION 发明人 ASANUMA YUJI
分类号 G03F7/26;G03F7/20;H01L21/027;(IPC1-7):G03F7/00 主分类号 G03F7/26
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