| 摘要 |
PURPOSE:To provide a low-cost semiconductor light-emitting device having an active layer comprising an InGaAlP material by utilizing a large diameter Si substrate and forming a GaAs epitaxial growth layer in such a way that crystal defects generating in an interface between the Si substrate and the GaAs epitaxial growth layer are restrained. CONSTITUTION:A double hetero structural body, with clad layers 6 and 8 holding an active layer 7 comprising an InGaAlP material from both sides, is formed on a semiconductor substrate 1. On the double hetero structural body a first electrode 11 is formed, and at a semiconductor light-emitting device, in which a second electrode 12 is formed on the surface on the opposite side of the double hetero structural body 5 of the semiconductor substrate 1, the semiconductor substrate 1 is set to be an Si substrate. |
