| 摘要 |
PROBLEM TO BE SOLVED: To decrease the contact resistance between a semiconductor layer and an electrode by forming a contact part comprising a dot-shaped specified layer on the surface of a contact layer for contact with the electrode in the laminated structure of a nitride-based compound semiconductor. SOLUTION: On a sapphire substrate 11, an undoped GaN ground layer 12, an N-type GaN contact layer 13, an N-type AlGa current injecting layer 14, a GaN optical guide layer 15, and InGaN active layer 16, a GaN optical guide layer 17, a P-type AlGaN current injecting layer 18 and a P-type GaN contact layer 19 are sequentially laminated and formed through a buffer layer. And on the surface of this P-type GaN contact layer 19, a contact part, wherein dots 20 comprising dot-shaped Inx Ga1-x N (0<x<=1) layers are formed, is provided. Thus, the contact resistance between the semiconductor layer and the electrode 22 can be decreased. |
