发明名称 |
Nonvolatile semiconductor memory |
摘要 |
A nonvolatile semiconductor memory includes a memory cell string containing a selection transistor and at least one cell transistor which is connected to the selection transistor and has a floating gate. Cell transistors are arranged in a memory cell array. The transistors each have a charge accumulation layer. A potential supply circuit supplies a potential different from a ground potential to gates of the cell transistor at least read operation and when the memory cell array is unselected.
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申请公布号 |
US6452853(B2) |
申请公布日期 |
2002.09.17 |
申请号 |
US20010901055 |
申请日期 |
2001.07.10 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
IWAHASHI HIROSHI |
分类号 |
G11C16/02;G11C11/56;G11C16/00;G11C16/06;G11C16/08;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C7/00 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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