发明名称 Nonvolatile semiconductor memory
摘要 A nonvolatile semiconductor memory includes a memory cell string containing a selection transistor and at least one cell transistor which is connected to the selection transistor and has a floating gate. Cell transistors are arranged in a memory cell array. The transistors each have a charge accumulation layer. A potential supply circuit supplies a potential different from a ground potential to gates of the cell transistor at least read operation and when the memory cell array is unselected.
申请公布号 US6452853(B2) 申请公布日期 2002.09.17
申请号 US20010901055 申请日期 2001.07.10
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 IWAHASHI HIROSHI
分类号 G11C16/02;G11C11/56;G11C16/00;G11C16/06;G11C16/08;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C7/00 主分类号 G11C16/02
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