发明名称 |
Method of fabricating a multistack 3-dimensional high density semiconductor device |
摘要 |
A multistack 3-D semiconductor structure comprising a first level structure comprising a first semiconductor substrate and first active devices; and a second level structure comprising a SOI semiconductor structure bonded to the first level structure and further comprising second active devices; and wherein the first active devices are more heat tolerant than the second active devices is provided along with a method for its fabrication.
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申请公布号 |
US6451634(B2) |
申请公布日期 |
2002.09.17 |
申请号 |
US20010925525 |
申请日期 |
2001.08.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MA WILLIAM HSIOH-LIEN;SCHEPIS DOMINIC JOSEPH |
分类号 |
H01L23/52;H01L21/02;H01L21/3205;H01L21/762;H01L21/768;H01L27/00;H01L27/12;(IPC1-7):H01L21/84 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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