METHOD FOR BROADENING ACTIVE SEMICONDUCTOR AREAS

摘要

The invention relates to a method for broadening active semiconductor areas (2) on a semiconductor substrate (1) that has at least one trench isolation (3). The method is composed of the following steps: deposition of a pad-oxide layer (5) on a surface (4) of the semiconductor substrate (1); deposition of a pad-nitride layer (6) on the pad-oxide layer (5); structuring of the pad-nitride layer (6) to create at least one opening in the pad-nitride layer (6) and etching of the trench isolation(s) (3) in the pad-oxide layer (5) and the semiconductor substrate (1). The aim of the invention is to adjust the broadening of the structures of active semiconductor areas in a simple and cost-effective manner that is substantially independent of other process steps during the production of the component. To achieve this, the inventive method is characterised by the selective deposition of an epitaxy layer (7) with a predetermined thickness and by the oxidation of the surface (4) of the semiconductor substrate (1), to create a thin oxide layer (9) for passivation.