| 摘要 |
Cut-off free EUV microlithography projection device for short wavelengths less than 100 nm, comprises object and image planes and four mirror arrangement (M1-4) in a centering arrangement between object and image planes, such that an intermediate image (Z) is formed with the image side numerical aperture greater than that 0.1 and optimally greater than or equal to 0.14. An Independent claim is made for a projection illumination installation for microlithography with an inventive projection objective.
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