Lithography method for forming semiconductor devices with sub-micron structures on a wafer and apparatus

摘要

In a lithography method with the steps coating (13) a lithography resist onto a wafer, exposing (14) the wafer, stabilizing (16), performing (17) a metrology inspection of the resulting lithography resist pattern, etching, and wet processing or implanting ions (18), for exposing, a reticle is aligned with respect to the wafer by atomic force microscopy in an atomic force microscopy (AFM) module (11).