发明名称 |
Electrode for plasma processes and method for manufacture and use thereof |
摘要 |
A silicon electrode for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out and a method of processing a semiconductor substrate with the electrode. The electrode is a low resistivity electrode having an electrical resistivity of less than 1 ohm-cm. The electrode can be a zero defect single crystal silicon or silicon carbide electrode such as a showerhead electrode bonded or clamped to support such as a temperature controlled plate or ring. The showerhead electrode can be in the form of a circular disk of uniform thickness and an elastomeric joint can be provided between a support ring and the electrode. The electrode can include gas outlets having 0.020 to 0.030 inch diameters.
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申请公布号 |
US2002127853(A1) |
申请公布日期 |
2002.09.12 |
申请号 |
US20000749916 |
申请日期 |
2000.12.29 |
申请人 |
HUBACEK JEROME S.;ELLINGBOE ALBERT R.;BENZING DAVID |
发明人 |
HUBACEK JEROME S.;ELLINGBOE ALBERT R.;BENZING DAVID |
分类号 |
H05H1/46;H01J37/32;H01L21/3065;(IPC1-7):H01L21/306;C23C16/00;H01L21/302;C23F1/02 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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