摘要 |
PURPOSE: A method for fabricating an optical device with a zero-defects and nonreflective spot-size converter are provided to reduce the reflectance and detect on a butt-joint portion. CONSTITUTION: A first clad layer(32), an active layer(33), and a second clad layer(34) are sequentially layered on (100)-surface of a semiconductor substrate(31). A double dielectric mask(35a,36) having a stacked structure is formed on the second clad layer(34), for opening one end of the second clad layer(34). By using the double dielectric mask(35a,36), the first clad layer(32), the active layer(33), and the second clad layer(34) are etched to a buried ridge structure, thereby exposing A-surface of the active layer(33), which is inclined at a predetermined angle toward (100)surface. A spot-size conversion region is grown on A-surface of the active layer(33). The double dielectric mask(35a,36) is removed.
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