发明名称 STORAGE CAPACITOR FOR A DRAM
摘要 A storage capacitor for a DRAM has a dielectric composed of silicon nitride and has at least two electrodes disposed opposite one another across the dielectric. A material having a high tunneling barrier between the Fermi level of the material and the conduction band of the dielectric is used for the electrodes. Suitable materials for the electrodes are metals such as platinum, tungsten and iridium or silicides.
申请公布号 US2002126543(A1) 申请公布日期 2002.09.12
申请号 US20000734466 申请日期 2000.12.11
申请人 REISINGER HANS;LEHMANN VOLKER;STENGL REINHARD;WENDT HERMANN;LANGE GERRIT;BACHHOFER HARALD;FRANOSCH MARTIN;SCHAFER HERBERT 发明人 REISINGER HANS;LEHMANN VOLKER;STENGL REINHARD;WENDT HERMANN;LANGE GERRIT;BACHHOFER HARALD;FRANOSCH MARTIN;SCHAFER HERBERT
分类号 H01L21/8242;H01L27/108;(IPC1-7):G11C7/00 主分类号 H01L21/8242
代理机构 代理人
主权项
地址