Field effect transistor using zirconiumtitanate thin film

摘要

The present invention relates to a field effect transistor device using ZrTiO4 for a diffusion barrier layer or a buffer layer of ferroelectrics. The field effect transistor device of the present invention comprises a buffer layer made of ZrTiO4 on a Si substrate and a ferroelectric dielectric layer comprising PZT formed on top of the buffer layer, and additionally a metal layer made of platinum in-between the PZT layer and the buffer layer. The device of the present invention shows superior interfacial characteristics between the PZT and the buffer layer by employing a buffer layer of ZrTiO4 comprising Zr and Ti which are components of PZT, the ferroelectric dielectric layer. Furthermore, the device of the present invention has improved characteristics by using the buffer layer that prevents a reaction between the PZT and the semiconductor substrate.