| 摘要 |
A power semiconductor module achieves high isolation strength from a base through selectively positioning a plurality of metal coatings on first and second surfaces and positioning edges of the plurality to beneficially reduce the field strength tangentially to a selected position, especially in a defined critical region directly adjacent a metal coating edge on a first surface opposite the base. This design results in regions which beneficially allow field lines to extend without functional detriment. The beneficial position selection is is achieved by means of an optimization process in which the tangential components of the field strength beside the first or second metallization edge reach identical values.
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