| 摘要 |
1,263,599. Semi-conductor devices. MATSUSHITA ELECTRONICS CORP. 22 Dec., 1969 [27 Dec., 1968], No. 62304/69. Heading H1K. A pressure transducer comprises a semiconductor substrate 1 on which is a layer 12 forming therewith a rectifying junction, a metal electrode layer 13 bonded to the layer 12 and forming a eutectic alloy bond with a metal layer 15 on a rigid core 14. The layer 12 is of molybdenum to form with the substrate a Schottky barrier or of a semi-conductor having conductivity different from that of the substrate to form a P-N junction therewith. The electrode layer 13 is of gold, aluminium, copper or a leadtin alloy. The layer 15 is of aluminium, copper, gold or nickel. The core 14 is of diamond, ruby, sapphire, agate, quartz or glass. The core and part of the electrode layer 13 are bonded with an adhesive 5 of a plastics material or rubber. The layer 15 is applied to the core 14 by vacuum deposition, chemical deposition or electroless plating. The electrode layer and the metal layer 15 are bonded by retaining the core with a vacuum sucker and pressing it against the electrode layer which is heated to a predetermined temperature. |
