Zeiterfassungsvorrichtung und Zeiterfassungsverfahren unter Verwendung eines Halbleiterelements

摘要

The invention relates to a time-detection device using a floating-gate-cell, wherein an ON-layer structure or a ONO-layer structure is provided between the floating-gate and the control-gate. A charge injection device is supplied in order to insert the floating-gate-electrode into the nitride layer of the ON-structure or the ONO-layer structure, wherein a voltage or a voltage pulse is applied to the control-gate-electrode, the centre of gravity of the charges injected into the nitride layer being located on the defining surface. Said time-detection device also comprises a device for detecting time elapsed since injection of the charges, based on changes in the transmission behaviour of the channel area, which are effected by displacement of the centre of gravity of the charges in the nitride layer away from the defining surface.