PLASMA PROCESSOR AND PLASMA PROCESSING METHOD

摘要

When an endpoint detector (17) (EPD) detects an end point (t5), a RF power (Bottom RF) from a high-frequency power source (12) is turned off (t5), and the supply of He gas (14) to the rear face of a wafer (W) is stopped (t5). The high voltage DC power source (13) (HV) is turned off (t6) under a condition that the RF power (Top RF) from the high-frequency power source (11) is controlled (t5) to set a range where a plasma discharge is maintained with no progress of etching. This process enables the suppression of the adsorption of particles while accurately controlling an etching quantity.