发明名称 DRY ETCH APPARATUS IN FABRICATION PROCESS OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A dry etch apparatus in a fabrication process of a semiconductor device is provided to reduce deposition of polymer by forming an exhaust path in a focus ring in the dry etch apparatus. CONSTITUTION: A cathode(24) is used for supplying power for generating plasma. A wafer chuck(26) is installed at an upper portion of the cathode(24). A wafer is loaded on the wafer chuck(26). A focus ring is installed around the wafer chuck(26) and the wafer(W) on loaded on the wafer chuck(26). The focus ring is formed by a ceramic material. The focus ring is projected from a circumference of the wafer(W). The focus ring is used for concentrating the plasma of an inside of a chamber(20) on the wafer(W). An exhaust path is formed in the focus ring. The focus ring is divided into an upper body(28a) and a lower body(28b) by the focus ring.
申请公布号 KR20020071398(A) 申请公布日期 2002.09.12
申请号 KR20010011533 申请日期 2001.03.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, DONG HEON;LEE, SEONG HO;LEE, TAE WON;SUNG, SUN HWAN
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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