发明名称 |
DRY ETCH APPARATUS IN FABRICATION PROCESS OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A dry etch apparatus in a fabrication process of a semiconductor device is provided to reduce deposition of polymer by forming an exhaust path in a focus ring in the dry etch apparatus. CONSTITUTION: A cathode(24) is used for supplying power for generating plasma. A wafer chuck(26) is installed at an upper portion of the cathode(24). A wafer is loaded on the wafer chuck(26). A focus ring is installed around the wafer chuck(26) and the wafer(W) on loaded on the wafer chuck(26). The focus ring is formed by a ceramic material. The focus ring is projected from a circumference of the wafer(W). The focus ring is used for concentrating the plasma of an inside of a chamber(20) on the wafer(W). An exhaust path is formed in the focus ring. The focus ring is divided into an upper body(28a) and a lower body(28b) by the focus ring.
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申请公布号 |
KR20020071398(A) |
申请公布日期 |
2002.09.12 |
申请号 |
KR20010011533 |
申请日期 |
2001.03.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, DONG HEON;LEE, SEONG HO;LEE, TAE WON;SUNG, SUN HWAN |
分类号 |
H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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