发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device has a gate electrode formed on P type semiconductor substrate through a gate insulation film, a low concentration N- type drain region formed so as to be adjacent to the gate electrode, a high concentration N+ type drain region separated from the other end of said gate electrode and included in said low N- type drain region, and a middle concentration N type layer at a region spanning at least from said gate electrode to said high concentration N+ type drain region, and formed so that impurity concentration becomes low at a region near the gate electrode.
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申请公布号 |
US2002125531(A1) |
申请公布日期 |
2002.09.12 |
申请号 |
US20010837397 |
申请日期 |
2001.04.18 |
申请人 |
KIKUCHI SHUICHI;NISHIBE EIJI;SUZUKI TAKUYA |
发明人 |
KIKUCHI SHUICHI;NISHIBE EIJI;SUZUKI TAKUYA |
分类号 |
H01L21/265;H01L21/336;H01L29/08;H01L29/78;(IPC1-7):H01L31/062 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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