| 摘要 |
The present invention provides multiple gate oxide layers with different thicknesses on a semiconductor substrate in an oxygen ion implantation process. The semiconductor substrate comprises a silicon surface, comprising at least a first area and a second area. A first mask layer, having a first opening to expose portions of the silicon surface in the first area, is formed on the silicon surface to cover surfaces of both the first area and the second area. An oxygen ion implantation process is then performed to implant oxygen ions with a predetermined concentration into the first area through the first opening. Then the first mask layer is removed. Finally, an oxidation process is performed to simultaneously form a silicon oxide layer with a first predetermined thickness on portions of the silicon surface in the first area and a silicon oxide layer with a second predetermined thickness on portions of the silicon surface in the second area.
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