| 摘要 |
<p>Compound semiconductor structures (96) and devices can be grown on patterned oxide layers (94) deposited on silicon (92). The deposition of Group II-VI and Group III-V compound semiconductors on patterned wafers results in an increase in the critical thickness for lattice mismatched layers and the relief of strain energy through side walls. As a result, high crystalline quality compound semiconductor material can be grown on less expensive and more accessible substrate to more cost effectively produce semiconductor components and devices having enhanced reliability.</p> |
