发明名称 |
FeRAM having bottom electrode connected to storage node and method for forming the same |
摘要 |
A FeRAM device in which a bottom electrode of a ferroelectric capacitor is connected to a source/drain region of a transistor and a top electrode is connected to a plate line. The FeRAM device comprises a semiconductor substrate; a gate electrode formed on the semiconductor substrate; an impurity region formed on each side of the gate electrode of the semiconductor substrate; a bottom electrode connected to the impurity region; an oxygen diffusion barrier layer formed on the bottom electrode; a ferroelectric layer formed on the oxygen diffusion barrier layer and the bottom electrode; and a top electrode formed on the ferroelectric layer.
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申请公布号 |
US2002125523(A1) |
申请公布日期 |
2002.09.12 |
申请号 |
US20010949083 |
申请日期 |
2001.09.10 |
申请人 |
OH SANG-HYUN |
发明人 |
OH SANG-HYUN |
分类号 |
H01L27/105;H01L21/02;H01L21/768;H01L21/8246;H01L27/115;(IPC1-7):H01L29/76;H01L21/824 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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