| 摘要 |
The integrated circuit device disclosed herein comprises an insulating layer (32) comprised of a first insulating material that has an opening (36) formed therein as defined by at least one sidewall (36A), at least one sidewall spacer (40) positioned adjacent the sidewall (36A) of the opening (36), the sidewall spacer (40) being comprised of a second insulating material, and a conductive interconnection (42) formed in the opening (36) in the insulating layer (32). In a further embodiment, the first insulating material has a dielectric constant less than approximately 3, and a density less than approximately 1.2 grams/cc, whereas the second insulating material has a dielectric constant less than approximately 7 and a density less than approximately 3 grams/cc. The method disclosed herein comprises forming an opening (36) in a first layer (32) of a first insulating material, the opening (36) being defined by at least one sidewall (36A), and conformally depositing a second layer (38) comprised of a second insulating material in the opening (36) above the sidewall (36A). The method further comprises performing an anisotropic etching process on the second layer to define a sidewall spacer (40) comprised of the second insulating material positioned adjacent the sidewall (36A) of the opening (36), and forming a conductive interconnection (42) in the opening (36) in the insulating layer (32) between the sidewall spacer (40). |
