THIN FILM TRANSISTOR WITH SOURCE/DRAIN ELECTRODES IN DUAL LAYER STRUCTURE, FABRICATING METHOD THEREOF, AND ACTIVE MATRIX TYPE DISPLAY DEVICE USING THE TFT AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A TFT with source/drain electrodes in a dual layer structure and a method for fabricating the same, and an active matrix type display device using the TFT and a method for fabricating the same are provided to simplify the fabricating procedure by using four masks for improving the yield. CONSTITUTION: A TFT includes source/drain electrodes(40-1,40-2) in a dual layer structure of a metal film(38) and a transparent conductive film(39), wherein the metal film is formed of one of Al, Al alloy, Mo, Mo alloy, Cr or Ti to have a lower specific resistance than the transparent conductive film, the transparent conductive film is formed of one of ITO, TO or IO, and the source/drain areas(35-1,35-2) are n-type or p-type conductive.