| 摘要 |
The semiconductor component has a first terminal zone of a first conductivity type and a drift zone of the first conductivity type adjoining the first terminal zone. Further, the component has a second terminal zone of the first conductivity type and a third terminal zone of the first conductivity type. A blocking zone is formed between the drift zone and the second terminal zone and between the drift zone and the third terminal zone. A contact short-circuits the second terminal zone and the blocking zone. A control electrode is formed to be insulated from the drift zone, the blocking zone, and the second terminal zone. An electrical resistor is formed between the contact and the third terminal zone.
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