| 摘要 |
A holder holding a wafer descends and the wafer comes in contact with a plating solution. In this state, the wafer is heated by a resistance heating element disposed in the holder so that the temperature of the wafer becomes gradually higher from its outer circumference to its center part. Then, voltage is applied between an anode electrode and the wafer to apply the plating on a face to be plated of the wafer.
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