发明名称 Method and apparatus for measurements of patterned structures
摘要 A method for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing. The structure represents a grid having at least one cycle formed of at least two metal-containing regions spaced by substantially transparent regions with respect to incident light defining a waveguide. An optical model is provided, which is based on at least some of the features of the structure defined by a certain process of its manufacturing, and on the relation between a range of the wavelengths of incident radiation to be used for measurements and a space size between the two metal-containing regions in the grid cycle, and a skin depth of said metal. The model is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure. A measurement is area is located and spectrophotometric measurements are applied to the measurement area, by illuminating it with incident light of a preset substantially wide wavelength range. A light component substantially specularly reflected from the measurement area is detected, and measured data representative of photometric intensifies of each wavelength within the wavelength range is obtained. The measured and theoretical data are analyzed and the optical model is optimized until the ,theoretical data satisfies a predetermined condition. Upon detecting that the predetermined condition is satisfied, said at least one parameter of the structure is calculated.
申请公布号 US2002128784(A1) 申请公布日期 2002.09.12
申请号 US20010011263 申请日期 2001.11.13
申请人 SCHEINER DAVID;MACHAVARIANI VLADIMIR 发明人 SCHEINER DAVID;MACHAVARIANI VLADIMIR
分类号 G01B11/02;G01B11/06;G01J3/42;H01L21/66;(IPC1-7):G01R15/00 主分类号 G01B11/02
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