发明名称 |
Nonvolatile semiconductor memory device and method for manufacturing the same |
摘要 |
A nonvolatile semiconductor memory device having a memory cell portion and peripheral circuit portion is disclosed. The nonvolatile semiconductor memory device has peripheral transistors formed in the peripheral circuit portion of a silicon substrate and cell transistors formed in the memory cell portion of the silicon substrate. The gate length of the cell transistor is shorter than the gate length of the peripheral transistor. Further, the nonvolatile semiconductor memory device has a silicon nitride film selectively formed on the memory cell portion. The silicon nitride film covers the cell transistors.
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申请公布号 |
US2002127802(A1) |
申请公布日期 |
2002.09.12 |
申请号 |
US20020145122 |
申请日期 |
2002.05.15 |
申请人 |
GODA AKIRA;SHIROTA RIICHIRO;SHIMIZU KAZUHIRO;HAZAMA HIROAKI;IIZUKA HIROHISA;ARITOME SEIICHI;MORIYAMA WAKAKO |
发明人 |
GODA AKIRA;SHIROTA RIICHIRO;SHIMIZU KAZUHIRO;HAZAMA HIROAKI;IIZUKA HIROHISA;ARITOME SEIICHI;MORIYAMA WAKAKO |
分类号 |
H01L21/8247;H01L27/10;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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