Semiconductor laser element having excellent light confinement effect and method for producing the semiconductor laser element

摘要

A semiconductor laser element including: a three-dimensional photonic crystal structure which has a light confining effect and includes alternating first and second refractive index changing layers, where refractive index of light periodically changes in a first direction in each first refractive index changing layer and periodically changes in a second direction in each second refractive index changing layer; and an active unit which is disposed in a portion having a predetermined refractive index inside the three-dimensional photonic crystal structure, and generates a laser beam in response to reception of electric power.