发明名称 |
Dry etching apparatus, etching method, and method of forming a wiring |
摘要 |
An etching apparatus is provided, in which a plurality of electrodes are disposed for placing a substrate, high-frequency power sources as many as electrodes are provided, and the electrodes and the high-frequency power sources are connected to each other independently. Among a plurality of electrodes, a high-frequency power applied to an electrode disposed below the central portion of the substrate and a high-frequency power applied to electrodes disposed below comer portions of the substrate are controlled respectively, whereby in-plane uniformity of etching can be enhanced.
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申请公布号 |
US2002125213(A1) |
申请公布日期 |
2002.09.12 |
申请号 |
US20010966689 |
申请日期 |
2001.09.27 |
申请人 |
YAMAZAKI SHUNPEI;SUZAWA HIDEOMI |
发明人 |
YAMAZAKI SHUNPEI;SUZAWA HIDEOMI |
分类号 |
H01L21/28;C03C15/00;G09F9/30;H01J37/32;H01L21/302;H01L21/3065;H01L21/311;H01L21/3213;H01L21/336;H01L21/77;H01L21/84;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):C23F1/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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