发明名称 Dry etching apparatus, etching method, and method of forming a wiring
摘要 An etching apparatus is provided, in which a plurality of electrodes are disposed for placing a substrate, high-frequency power sources as many as electrodes are provided, and the electrodes and the high-frequency power sources are connected to each other independently. Among a plurality of electrodes, a high-frequency power applied to an electrode disposed below the central portion of the substrate and a high-frequency power applied to electrodes disposed below comer portions of the substrate are controlled respectively, whereby in-plane uniformity of etching can be enhanced.
申请公布号 US2002125213(A1) 申请公布日期 2002.09.12
申请号 US20010966689 申请日期 2001.09.27
申请人 YAMAZAKI SHUNPEI;SUZAWA HIDEOMI 发明人 YAMAZAKI SHUNPEI;SUZAWA HIDEOMI
分类号 H01L21/28;C03C15/00;G09F9/30;H01J37/32;H01L21/302;H01L21/3065;H01L21/311;H01L21/3213;H01L21/336;H01L21/77;H01L21/84;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):C23F1/00 主分类号 H01L21/28
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