发明名称 |
QUANTUM DOT VERTICAL CAVITY SURFACE EMITTING LASER |
摘要 |
A quantum dot vertical cavity surface-emitting laser has a low threshold gain. Top and bottom mirrors have a low mirror loss, with at least one of the mirrors being laterally oxidized to form semiconductor/oxide mirror pairs. In one embodiment, mode control layers reduce the optical field intensity in contact layers, reducing optical absorption. In one embodiment, delamination features are included to inhibit the tendency of laterally oxidized mirrors form delaminating. |
申请公布号 |
WO02071562(A2) |
申请公布日期 |
2002.09.12 |
申请号 |
WO2002US06221 |
申请日期 |
2002.03.01 |
申请人 |
SCIENCE & TECHNOLOGY CORPORATION @ UNM |
发明人 |
HUANG, XIAODONG;STINTZ, ANDREAS;MALLOY, KEVIN, J.;LIU, GUANGTIAN;LESTER, LUKE;CHENG, JULIAN |
分类号 |
H01L29/06;H01S5/042;H01S5/12;H01S5/14;H01S5/183;H01S5/34;H01S5/40 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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