发明名称 Deposition of fluorosilsesquioxane films
摘要 There is provided an array of fluoro-substituted silsesquioxane thin film precursors having a structure wherein fluoro groups are bonded to the silicon atoms of a silsesquioxane cage. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [F-SiO1.5]x[H-SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. Also provided are films made from these precursors and objects comprising these films.
申请公布号 US2002127416(A1) 申请公布日期 2002.09.12
申请号 US20020150445 申请日期 2002.05.16
申请人 HONEYWELL INTERNATIONAL INC. 发明人 HACKER NIGEL P.
分类号 B05D5/12;B05D7/24;C01B33/113;C07F7/12;C08G77/24;C09D4/00;C09D183/08;C23C16/40;H01L21/312;H01L21/316;(IPC1-7):B32B9/04;H01L21/31;H01L29/40;B32B3/26;H01L23/48;H01L21/469 主分类号 B05D5/12
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