Verfahren zur Entfernung einer Maskenschicht von einem Halbleitersubstrat

摘要

The invention relates to a semiconductor substrate (1) on which a first layer (2), a second layer (3) and a third layer (4) are disposed. The third layer (4) is for example a lacquer mask that is used to structure the second layer (3). The second layer (3) is for example a structured hard mask that is used to structure the first layer (2). The third layer (4) is then removed and a fourth layer (8) is deposited. The fourth layer (8) is for example an insulator that fills the trenches formed in the first layer (2). The fourth layer (8) is then planarized in a CMP step, and planarization is continued while the second layer (3) that is for example a hard mask is removed from the first layer (2) together with the fourth layer (8), thereby leaving the fourth layer (8) in a trench (7) that is disposed in the first layer (2).