| 摘要 |
The circuit permits the capacitive control of the memory cell (delete, programme and read), using an additional capacitance (4), which isolates the antenna (3) from the control circuit (2) of the memory cell (1). If an attack occurs, the charge is collected in the antenna. The capacitance prevents the charge from being discharged in such a way that the generated voltage affects the memory cell, causing the charged condition of the latter to be modified and said modification is detected. The capacitance can be configured as any type of capacitor structure in the circuit and is produced by known methods. |
