METHOD OF FORMING INSULATION LAYER IN TRENCH ISOLATION TYPE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming an insulation layer in trench isolation type semiconductor device is provided to fill isolation layer into a trench having a high aspect ratio without defects by using an SOG(Spin On glass) layer. CONSTITUTION: A trench etch mask pattern(13) is formed on a substrate(10) including a pad oxide layer(11). A trench for isolation is formed on the substrate(10) by etching the substrate(10). A thermal oxide layer(15) is formed on an inner wall of the trench. A silicon nitride liner(17) is laminated on the thermal oxide layer(15). An SOG layer is formed on the substrate(10). A curing process for the SOG layer is performed. An etch process for the cured SOG layer(211) is performed. A silicon oxide layer(31) is deposited on the substrate(10) by a CVD(Chemical Vapor Deposition) method. A trench isolation layer is formed by removing the silicon nitride layer and the pad oxide layer(11).