POLYCRYSTALLINE SILICON TFT-LCD AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A polycrystalline silicon TFT-LCD and a method for fabricating the same are provided to simplify the fabrication procedure by using 6 exposure masks for transmitting signals applied to data wires to drain areas of an active area pattern via drain electrodes formed of pixel electrode layer and directly connecting the pixel electrodes to the source areas without any source electrodes. CONSTITUTION: A polycrystalline silicon TFT-LCD includes data wires(125) formed on a substrate, a polycrystalline silicon active area pattern(113) formed not to overlap the data wires, a gate insulating film(115) stacked on the active area pattern, gate wires(117) formed on the gate insulating film and having gate electrodes defining source/drain and channel areas intersecting the active area pattern, an interlayer insulating film(119) formed on the gate wires, drain electrodes(141) formed on the interlayer insulating film and connecting the data wires to the drain areas via data contact holes formed on a part of the data wires through the gate insulating film and the interlayer insulating film and drain contact holes formed on a part of the drain areas through the gate insulating film and the interlayer insulating film, and pixel electrodes(143) formed on the interlayer insulating film to be connected to the source areas via contact holes formed on a part of the source areas through the gate insulating film and the interlayer insulating film.