| 发明名称 |
PASSIVATION OF POROUS SEMICONDUCTORS |
| 摘要 |
<p>A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structure are found to have unprecedented stability.</p> |
| 申请公布号 |
CA2340535(A1) |
申请公布日期 |
2002.09.12 |
| 申请号 |
CA20012340535 |
申请日期 |
2001.03.12 |
| 申请人 |
NATIONAL RESEARCH COUNCIL OF CANADA |
发明人 |
WAYNER, DANIAL D. M.;MORIN, SYLVIE;LOCKWOOD, DAVID J.;BOUKHERROUB, RABAH |
| 分类号 |
H01L21/312;(IPC1-7):H01L21/47;H01L21/477 |
主分类号 |
H01L21/312 |
| 代理机构 |
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代理人 |
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| 主权项 |
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