| 摘要 |
PURPOSE: To provide a semiconductor device which reduces influence on the transistor threshold variation, which is one among noise components in the amplification of a sense amplifier, thereby enabling the sense amplifier to exact ly sense/amplify microsignals read from memory cells. CONSTITUTION: In a DRAM chip Chip, sense amplifier cross coupling parts CC use p¬+ gate PMOS parts Qp0, Qp1 of a p¬+ polysilicon gate, having low impurity concentration in a channel and n¬+ gate NMOS parts Qn0, Qn1 of an n¬+ polysilicon gate, and the PMOS has a high substrate voltage and the NMOS has a low substrate voltage. This reduces the threshold variation due to channel implantation, thereby making a sense amplifier exactly sense/amplify micro-signals generated on data lines, during reading out of a low-voltage memory array. The substrate bias effect raises the threshold and lessens the leakage current in a sense amplifier data holding state.
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