| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for cleaning a mask for film formation provided with multilayers, which can control the generation amount of reaction gas to be little. SOLUTION: The method for cleaning the mask M for film formation, which has layers consisting of the easily-etchable first metal-films L1 and L2 and the hardly-etchable second metal-film L3, by etching with nitric acid, comprises steps of; cleaning the mask with a nitric acid solution 3 of such a comparatively low temperature as to finish etching of the first metal films L1 and L2 within a first reaction time, but as not to initiate etching of the second metal film L3 within the first reaction time, within the time; and then cleaning the mask with a nitric acid solution 3 of such a comparatively high temperature as to finish etching of the second metal film L3 within a second reaction time, but as not to initiate etching of the mask M within the second reaction time, within the time.
|
