| 摘要 |
PROBLEM TO BE SOLVED: To obtain a resist material responsive to a high-energy ray, having excellent sensitivity, resolution and oxygen plasma etching resistance at a wavelength of <=300 nm, consequently the resist material capable of being made into an excellent material especially for two layer resist due to these characteristics, readily forming a pattern which is fine and yet vertical to a substrate, therefore suitable as a fine pattern forming material for producing a very large scale integration. SOLUTION: The silicon-containing high polymer compound is characterized by containing a recurring unit represented by the formula (1) or (2) [R<1> is an alkylene group; R<2> is a hydrogen atom or an alkyl group; R<3> , R<4> and R<5> are an alkyl group, haloalkyl group, aryl group or silicon-containing group and at least one of them is a silicon-containing group; R<6> is an oxygen atom, alkylene group or arylene group; R<7> -R<9> are an alkyl group, fluorinated alkyl group or aryl group; n is an integer of 2-10]. |
